Characterization and Modeling of Nanoscaled SONOS/MANOS Nonvolatile Semiconductor Memory (NVSM) Devices
The electron mobility in the channel inversion layer of a SONOS device shows an initial improvement for low-level electron charge storage in the silicon nitride, followed by a reduction until the stored electron density reaches a¼3.8x1012cm-2. This may be explained by the stored electron charges initially moving the inversion layer electron distribution further from the Si-SiO2 interface, thereby reducing the impact of local Coulomb scattering, which is countered eventually by surface roughness and remote Coulomb and phonon scattering.In this chapter, we first introduce the threshold voltage (flatband voltage) tracking setups for NVSM transistors and ... Finally, speed (write/erase), retention, and endurance studies of SONOS and MANOS devices at high temperatures will beanbsp;...
| Title | : | Characterization and Modeling of Nanoscaled SONOS/MANOS Nonvolatile Semiconductor Memory (NVSM) Devices |
| Author | : | |
| Publisher | : | ProQuest - 2009 |
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